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CRD5381 7812CT STK0850P 00150 21S07 LSJ507 EQ156 2011A
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 Reflective Photosensors (Photo Reflectors)
CNZ2152
Reflective Photosensor
Overview
CNZ2152 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor is used as the light detecting element. The two elements are located parallel in the same direction and objects are detected when passing in front of the device.
3.20.2
Mark for indicating LED side o1.5
Unit : mm
8.00.2
3.50.2 1.0 +0.1 -0.2
14.0 +0.1 -0.2 16.00.3
o2.20.2
1.0(typ.)
Features
Fast response High SN ratio High sensitivity
7.0 min.
(10.0) 2
6.20.2
Detection of paper, film and cloth Detection of coin and bill
Optical mark reading
Detection of position and edge
1
Start, end mark detection of magnetic tape
Absolute Maximum Ratings (Ta = 25C)
Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector to emitter voltage Output (Photo Emitter to collector voltage transistor) Collector current Collector power dissipation Temperature Operating ambient temperature Storage temperature Reverse voltage (DC) Symbol Ratings VR IF PD*1 VCEO VECO IC PC*2 Topr 3 100 150 20 3 30 150 -25 to +85 Unit V mA mW V V mA mW C C
(Note) ( ) Dimension is reference
*1
Tstg -30 to +100
Input power derating ratio is 2.0 mW/C at Ta 25C. *2 Output power derating ratio is 2.0 mW/C at Ta 25C.
Electrical Characteristics (Ta = 25C)
Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Collector current Transfer characteristics Response time
*1 *2 Transfer
Symbol VF IR ICEO IC*1 IC*2 VR = 3V VCE = 10V
Conditions IF = 100mA
min
VCC = 5V, IF = 20mA, RL = 100
0.8
tr*3 , tf*4 VCC = 10V, IC = 1mA, RL = 100
*3
Collector to emitter saturation voltage VCE(sat) IF = 100mA, IC = 1mA
characteristics measurement circuit (Ambient light is shut off completely)
IC VCC d = 5 mm
*1 *2
IF
*4
,, ,, ,,, , , ,, ,, ,
Time required for the collector current to increase from 10% to 90% of its final value. Time required for the collector current to decrease from 90% to 10% of its initial value.
RL
Test paper
Standard white paper (reflective ratio 90%) Tracing paper (paper SM-1 for 2nd original paper)
, ,,
3 4 1 23 4 Pin connection
Applications
1.25 0.05 3 500 8
,,,, ,,,
o0.9+0.1 -0.2 4-o0.45 (2.54)
10.00.2
typ
max 1.5 10 2
Unit V A A mA A s
0.6
V
1
CNZ2152
Reflective Photosensors (Photo Reflectors)
IF , IC -- Ta
120 120
IF -- VF
1.6 Ta = 25C
VF -- Ta
IF , IC (mA)
100
IF
100
IF = 100mA
IF (mA)
Forward current, collector current
80
80
VF (V)
1.2 50mA
60
Forward current
60
Forward voltage
0 0.4 0.8 1.2 1.6 2.0 2.4
0.8
40 IC 20
40
0.4
20
0 - 25
0
20
40
60
80
100
0
0 - 40 - 20
0
20
40
60
80
100
Ambient temperature Ta (C )
Forward voltage VF (V)
Ambient temperature Ta (C )
IC -- IF
10 2 VCC = 5V Ta = 25C RL = 100 (1) White paper (Reflective ratio 90%) (2) Tracing paper (Paper SM - 1 for 2nd original paper) (1) 1 16
IC -- VCE
160 IF = 100mA 80mA Ta = 25C
IC -- Ta
VCC = 5V IF = 20mA RL = 100 120
IC (mA)
10
IC (mA)
12
60mA 50mA 40mA
8
Relative output current
Collector current
Collector current
IC (%)
20mA 10mA
30mA
80
(2) 10 -1
4
40
10 -2 10 -1
1
10
10 2
0
0
4
8
12
16
20
24
0 - 40 - 20
0
20
40
60
80
100
Forward current IF (mA)
Collector to emitter voltage VCE (V)
Ambient temperature Ta (C )
ICEO -- Ta
10 3 10 3
tr -- IC
VCC = 10V Ta = 25C 16
IC -- d
VCC = 5V Ta = 25C IF = 20mA RL = 100 12
ICEO (A)
10 2
tr (s)
10
Mirror
Collector current
Dark current
Rise time
10
100
8
1
VCE = 25V
10V
1 10 -1
Sig.IN
VCC Sig. V1 OUT V2 V2 RL 90% 10%
4
White paper (Reflective ratio 90%)
10 -2 - 40 - 20
, ,,
V1 50
0
20
40
60
80
100
10 -1 10 -2
tr
td
tf
10 0 0 2 4 6 8 10 12
10 -1
1
Ambient temperature Ta (C )
Collector current IC (mA)
2
, ,
d
RL = 1k
IC (mA)
10 2
Distance d (mm)


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